Where engineers trying to learn power GaN get into trouble

Gallium nitride (GaN) is one of the technologies that could well displace silicon MOSFETs in the next generation of power transistors. As silicon approaches its performance limits, GaN devices conduct better and switch faster.
But GaN devices don’t behave the way silicon power devices do. That’s the reason for the recently published textbook GaN Transistors for Efficient Power Conversion, 2nd Edition. Written by power industry veteran Dr. Alex Lidow along with Johan Strydom, Michael de Rooij, and David Reusch, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications.
In this short podcast, Alex Lidow talks about areas where engineers have trouble grasping the differences between GaN and silicon power devices.

Alex Lidow is CEO and co-founder of Efficient Power Conversion Corporation (EPC). In 1977 he joined International Rectifier as an R&D engineer. In 1978 he co-invented the HEXFET power MOSFET, a power transistor that launched the modern power conversion market. Lidow finally became International Rectifier’s CEO and held that position for 12 years. Dr. Lidow holds many patents in power semiconductor technology, including basic patents in power MOSFETs as well as in GaN FETs. In 2004 he was elected to the Engineering Hall of Fame. Dr. Lidow earned his Bachelor of Science degree from Caltech in 1975 and his Ph.D. from Stanford in 1977.

Source by Design World

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